文章基本信息

标题：Selected Application of Electron Beams in Solid State Materials and Devies Technology
本地全文：下载
作者：S. C. Jain
期刊名称：Defence Science Journal
印刷版ISSN：0976-464X
出版年度：2014
卷号：30
期号：2
页码：95-104
DOI：10.14429/dsj.30.6431
语种：English
出版社：Defence Scientific Information & Documentation Centre
摘要：Experimental work on electron beam annealing of implanted or diffused semiconductor layers is reviewed. In the pulsed beam annealing technique, the top layer of the semiconductor melts and regrows epitaxially. All dopant atoms are frozen in electrically active state during this process. The point defects and clusters caused by radiation damage are completely annealed out. The bulk of the material remains unaffected as its temperature does not rise by more than a few degrees. In the CW electron beam annealing, the layer does not melt but due to sharp temperature gradient and high temperature of the layer, the growth of solid phase epitaxial layer is induced. However, a part of the dopant atoms may remain electrically inactive in this process of annealing. The pulsed beam annealing has also been used for growing high quality single crystal layers of germanium on silicon substrate. Recently, a new technology has been developed to grow silicon single crystal layers on amorphous substrates. Recent advances in the method of determination of lifetime using electron beams are also discussed.
关键词：Solid phase epitaxial;Crystal layers;Electron beam;Semiconductor layers