文章基本信息

标题：(112) Surface of CuInSe<sub><b>2</b></sub> Thin Films with Doped Cd Atoms
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作者：Bo Yin ; Chaogang Lou
期刊名称：Advances in Condensed Matter Physics
印刷版ISSN：1687-8108
电子版ISSN：1687-8124
出版年度：2015
卷号：2015
DOI：10.1155/2015/206501
出版社：Hindawi Publishing Corporation
摘要：The doping behavior of Cd atoms in the CuInSe2 thin films and their influences on electronic structures are investigated. The doped Cd atoms replace Cu atoms and prefer to stay at the (112) surface of the thin films. They combine with Cu vacancies to form defect pairs due to low formation energy. The Cd atom does not by itself modify significantly the electronic structure of the surface, but the defect pairs have important influences. They result in a down shift of valence band maximum and form a hole barrier at the surface, which can prevent holes from reaching the surface and reduce the recombination of carriers.