文章基本信息

标题：Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes
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作者：Manh-Ha Doan ; Jaejin Lee
期刊名称：Advances in Condensed Matter Physics
印刷版ISSN：1687-8108
电子版ISSN：1687-8124
出版年度：2014
卷号：2014
DOI：10.1155/2014/671210
出版社：Hindawi Publishing Corporation
摘要：In addition to the standard 447 nm blue emission from the InGaN/GaN multiple quantum wells, a high-energy shoulder is clearly observed in cathodoluminescence spectra of the high-efficiency InGaN/GaN blue light emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Monochromatic cathodoluminescence images of the samples measured at low temperature reveal a competition between the two emissions in the vicinity of the dislocations. The high-energy emission is dominant at the regions near the dislocation cores, while the blue emission is enhanced around the dislocation edges. The high-energy emission region is considered as a potential barrier that prevents the carriers for the blue emission from nonradiatively recombining at the dislocations.