文章基本信息

标题：Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes
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作者：Cui Yan ; Yao Minglei ; Zhang Qunying 等
期刊名称：International Journal of Polymer Science
印刷版ISSN：1687-9422
电子版ISSN：1687-9430
出版年度：2014
卷号：2014
DOI：10.1155/2014/574684
出版社：Hindawi Publishing Corporation
摘要：Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3 (PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.