文章基本信息

标题：An Integrated ISFET pH Microsensor on a CMOS Standard Process
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作者：Francisco López-Huerta ; Rosa María Woo-Garcia ; Miguel Lara-Castro 等
期刊名称：Journal of Sensor Technology
印刷版ISSN：2161-122X
电子版ISSN：2161-1238
出版年度：2013
卷号：3
期号：3
页码：57-62
DOI：10.4236/jst.2013.33010
出版社：Scientific Research Publishing
摘要：We present the design and integration of a nine-pH microsensor array on a single silicon substrate with its own signal readout circuit, integrated in a 0.6-μm commercial standard complementary metal oxide semiconductor (CMOS) process. An ion sensitive field effect transistor (ISFET) has been used as pH microsensor and an instrumentation amplifier as the read-out circuit. The ISFET structure is conformed by the channel length and ratio of MOS transistor, gate extended and the selective membrane, for which silicon nitride (Si3N4) is employed as an ion selective element. The complete design includes shielding around the pH microsensor and the readout circuit to avoid leakage of current to the substrate. The readout circuit is composed by three operational amplifiers and resistances that form the instrumentation amplifier, with a ±2.5 V bias has a 50 dB gain, power supply rejection ratio (PSSR) of 120 dB and common mode rejection ratio (CMRR) of 127 dB. The complete system is integrated in a 1.12 mm2 silicon area; it presents a 59 mV/pH linearity, within a concentration range of 2 to 12 of pH level, making it a good alternative for biological or medical applications.
关键词：CMOS; Instrumentation Amplifier; ISFET; pH