文章基本信息

标题：A 1.8V and 2GHz Inductively Degenerated CMOS Low Noise Amplifier
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作者：Somesh Kumar ; Dr. Ravi Kumar
期刊名称：International Journal of Electronics Communication and Computer Technology
印刷版ISSN：2249-7838
出版年度：2012
卷号：2
期号：4
页码：150
出版社：International Journal of Electronics Communication and Computer Technology
摘要：This paper presents the design and simulation of Low Noise Amplifier (LNA) in a 0.18μm CMOS technology. The LNA function is to amplify extremely low noise amplifier without adding noise and preserving required signal to noise ratio. Cadence design tool Spectre_RF is used to design and simulation based on resistors, inductors, capacitors and transistors. Power constrained methodology is used for the design of Low Noise Amplifier. The amplifier provides a forward gain (S21) of 18.22dB with noise figure (NF) of 2.49dB while drawing 8.1mW power from a 1.8V voltage supply
关键词：Low Noise Amplifier (LNA); CMOS; noise figure; ;gain; IIP3