文章基本信息

标题：High Fin Width Mosfet Using Gaa Structure
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作者：S.L.Tripathi ; Ramanuj Mishra ; R.A.Mishra 等
期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2012
卷号：3
期号：5
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：This paper describes the design and optimization of gate-all-around (GAA) MOSFETs structures. The optimum value of Fin width and Fin height are investigated for superior subthreshold behavior. Also the performance of Fin shaped GAA with gate oxide HfO2 are simulated and compared with conventional gate oxide SiO2 for the same structure. As a result, it was observed that the GAA with high K dielectric gate oxide has more possibility to optimize the Fin width with improved performance. All the simulations are performed on 3-D TCAD device simulator.
关键词：Gate all around(GAA);TG FinFET; High K gate oxide; Silicon-On-Insulator(SOI); Work function; Short;channel effect; DIBL; Subthreshold Slope;3-D Sentaurus TCAD tool.