文章基本信息

标题：Performance Evaluation of FD-SOI MOSFETS for Different Metal Gate Work Function
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作者：Deepesh Ranka ; Ashwani K. Rana ; Rakesh Kumar Yadav 等
期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2011
卷号：2
期号：1
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF THE DEVICE THAT HAD BEEN CONCENTRATED IS 25NM. FROM SIMULATION WE OBSERVED THAT BY CHANGING THE WORK FUNCTION OF THE METAL GATES OF FD-SOI MOSFET WE CAN CHANGE THE THRESHOLD VOLTAGE. HENCE BY USING THIS TECHNIQUE WE CAN SET THE APPROPRIATE THRESHOLD VOLTAGE OF FD-SOI MOSFET AT SAME VOLTAGE AND WE CAN DECREASE THE LEAKAGE CURRENT, GATE TUNNELLING CURRENT AND SHORT CHANNEL EFFECTS AND INCREASE DRIVE CURRENT.
关键词：Silicon-On-Insulator; Work function; Fully-Depleted; DIBL; Subthreshold Slope; Sentaurus TCAD tool