文章基本信息

标题：22nm High K Metal Gate Inverter Comparative Analysis of Substrate Biasing Effect on Low Power And High Performance Ptm Models
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作者：Shobha Sharma
期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2012
卷号：2
期号：2
页码：251-256
出版社：International Journal of Soft Computing & Engineering
摘要：This paper analysis the low power and high performance models of PTM with Hi-K metal gate cmos technology by using them in an cmos inverter. Also the effect of substrate body biasing is analysed on the output characteristics. The comparison tables are drawn on Voltage Transfer Characteristic in normal biasing as well as in nsubstrate and psubstrate biasing with input voltage sweeping from minimum to maximum voltage, at 22nm technology node. This analysis gives an insight into unusual leakages in the gate and supply terminal at 22nm node. All the simulations are being done with Hspice simulator using PTM models of 22nm cmos HiK-metal gate of Arizona state University, USA.
关键词：22nm; body biasing;BSIM473; ptm; scaling issue.