文章基本信息

标题：Modeling and Simulation of Triple Metal Cylindrical Surround Gate MOSFETs for Reduced Short Channel Effects
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作者：Santosh Kumar Gupta ; S. Baishya
期刊名称：International Journal of Soft Computing & Engineering
电子版ISSN：2231-2307
出版年度：2012
卷号：2
期号：2
页码：214-221
出版社：International Journal of Soft Computing & Engineering
摘要：Due to the continuous scaling of the MOS transistors it has become absolute necessary to investigate for the new transistor architectures for better control of SCEs and HCEs. In literature triple metal and double metal gate structure has been proposed to reduce the SCEs and HCEs due to scaling of the MOS transistors. The double metal and triple metal structures screen the effect of drain voltage change on the source/channel barrier reducing the SCE. The triple metal gate structure however induces an electrical junction on source and drain side which works as ultra shallow source/drain junctions. Since the surround gate structures have been found to have best control over the channel a cylindrical surround gate structure with triple metal was recently proposed by Cong Li et al. In this paper we present the physically based analytical model for the surface potential of triple metal cylindrical surround gate MOSFET. The model takes into account for the drift-diffusion currents and continuity equations. In the latter part of the paper some 2D simulation results of triple metal gate MOS transistor has been shown. The device has also been explored for the suitable channel doping in terms of subthreshold slope, DIBL, transconductance etc.
关键词：Cylindrical Surround Gate MOSFETs;Surface Potential; TCAD; Short Channel Effects; Analog.