文章基本信息

标题：Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors
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作者：Kimihiro Matsukawa ; Mitsuru Watanabe ; Takashi Hamada 等
期刊名称：International Journal of Polymer Science
印刷版ISSN：1687-9422
电子版ISSN：1687-9430
出版年度：2012
卷号：2012
DOI：10.1155/2012/852063
出版社：Hindawi Publishing Corporation
摘要：Printable organic thin-film transistor (O-TFT) is one of the most recognized technical issues nowadays. Our recent progress on the formation of organic-inorganic hybrid thin films consists of polymethylsilsesquioxane (PMSQ), and its applications for the gate-insulating layer of O-TFTs are introduced in this paper. PMSQ synthesized in toluene solution with formic acid catalyst exhibited the electric resistivity of higher than 1014 Ω cm after thermal treatment at 150°C, and the very low concentration of residual silanol groups in PMSQ was confirmed. The PMSQ film contains no mobile ionic impurities, and this is also important property for the practical use for the gate-insulating materials. In the case of top-contact type TFT using poly(3-hexylthiophene) (P3HT) with PMSQ gate-insulating layer, the device properties were comparable with the TFTs having thermally grown SiO2 gate-insulating layer. The feasibility of PMSQ as a gate-insulating material for O-TFTs, which was fabricated on a flexible plastic substrate, has been demonstrated. Moreover, by the modification of PMSQ, further functionalities, such as surface hydrophobicity, high permittivity that allows low driving voltage, and photocurability that allows photolithography, could be appended to the PMSQ gate-insulating layers.