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标题：Charge Multiplication Properties in Highly Irradiated Epitaxial Silicon Detectors
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作者：J. Lange ; J. Becker ; E. Fretwurst 等
期刊名称：PoS - Proceedings of Science
印刷版ISSN：1824-8039
出版年度：2010
卷号：2010
出版社：SISSA, Scuola Internazionale Superiore di Studi Avanzati
摘要：Charge multiplication (CM) occuring in highly radiation-damaged Si sensors is currently under discussion as an option to overcome the strong trapping of charge carriers in the innermost pixel layers of future Super-LHC detectors. In this work, CM was studied in p+-n epitaxial silicon pad diodes of 75, 100 and 150 m thickness after 24 GeV/c proton irradiation with 1 MeV neutron equivalent fluences in the order of 1016 cm􀀀2. Basic properties like the development and location of the CM region, proportionality between measured and deposited charge, spatial uniformity and long-term stability, which were studied with charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT), are reviewed. Using 90Sr b-particles and an amplifier with 25 ns shaping time the signal in the CM regime for radiation similar to minimum ionising particles was investigated. Also associated noise, signal-to-noise ratio and effects of CM on the charge spectrum were studied.