文章基本信息

标题：Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)
本地全文：下载
作者：Yuebo Liu ; Honghui Liu ; Hang Yang 等
期刊名称：Advances in Condensed Matter Physics
印刷版ISSN：1687-8108
电子版ISSN：1687-8124
出版年度：2021
卷号：2021
页码：1-5
DOI：10.1155/2021/9990673
出版社：Hindawi Publishing Corporation
摘要：Micropyramid vertical GaN-based ultraviolet (UV) light-emitting diodes (LEDs) on Si(111) substrate have been fabricated by selective area growth to reduce threading dislocations and the polarization effects. There is no-light emission at the bottom and six planes of the pyramid at lower current due to the leakage current and nonradiative recombination of the dislocation at the bottom and the 90° threading dislocations (TDs) at six planes of the pyramid, and the top of the pyramid is the high-brightness region. The micropyramid UV LED has a high optical output intensity under a small current injection, and the series resistance of unit area is only a quarter of the conventional vertical LEDs, so the micropyramid UV LED would have a high output power under the drive circuit. The reverse leakage current of a single micropyramid UV LED is 2 nA at −10 V.