文章基本信息

标题：Band structure engineering of NiS2 monolayer by transition metal doping
本地全文：下载
作者：H. Khalatbari ; S. Izadi Vishkayi ; M. Oskouian 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2021
卷号：11
期号：1
页码：5779
DOI：10.1038/s41598-021-84967-3
出版社：Springer Nature
摘要：Abstract By using density functional theory calculations, we have studied the effects of V-, Cr-, Mn-, Fe- and Co-doped on the electronic and magnetic properties of the 1T-NiS 2 monolayer. The results show that pure 1T-NiS 2 monolayer is a non-magnetic semiconductor. Whereas depending on the species of transition metal atom, the substituted 1T-NiS 2 monolayer can become a magnetic semiconductor (Mn-doped), half-metal (V- and Fe-doped) and magnetic (Cr-doped) or non-magnetic (Co-doped) metal. The results indicate that the magnetism can be controlled by the doping of 3d transition metal atoms on the monolayer. In this paper, the engineering of the electric and magnetic properties of 1T-NiS 2 monolayer is revealed. It is clear that it could have a promising application in new nanoelectronic and spintronic devices.
其他摘要：Abstract By using density functional theory calculations, we have studied the effects of V-, Cr-, Mn-, Fe- and Co-doped on the electronic and magnetic properties of the 1T-NiS 2 monolayer. The results show that pure 1T-NiS 2 monolayer is a non-magnetic semiconductor. Whereas depending on the species of transition metal atom, the substituted 1T-NiS 2 monolayer can become a magnetic semiconductor (Mn-doped), half-metal (V- and Fe-doped) and magnetic (Cr-doped) or non-magnetic (Co-doped) metal. The results indicate that the magnetism can be controlled by the doping of 3d transition metal atoms on the monolayer. In this paper, the engineering of the electric and magnetic properties of 1T-NiS 2 monolayer is revealed. It is clear that it could have a promising application in new nanoelectronic and spintronic devices.