文章基本信息

标题：NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode
本地全文：下载
作者：Muhammad Hussain ; Syed Hassan Abbas Jaffery ; Asif Ali 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2021
卷号：11
期号：1
页码：3688
DOI：10.1038/s41598-021-83187-z
出版社：Springer Nature
摘要：Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe 2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 10 4 was obtained at V g = − 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe 2 . The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW −1 , an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 10 9 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 10 10 W −1 , and the noise equivalent power (NEP) of 1.22 × 10 –13 WHz −1/2 . The strong light-matter interaction stipulates that the GeSe/MoSe 2 diode may open new realms in multi-functional electronics and optoelectronics applications.
其他摘要：Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe 2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 10 4 was obtained at V g = − 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe 2 . The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW −1 , an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 10 9 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 10 10 W −1 , and the noise equivalent power (NEP) of 1.22 × 10 –13 WHz −1/2 . The strong light-matter interaction stipulates that the GeSe/MoSe 2 diode may open new realms in multi-functional electronics and optoelectronics applications.