文章基本信息

标题：Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si
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作者：Sueda Saylan ; Haila M. Aldosari ; Khaled Humood 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2020
卷号：10
期号：1
页码：1-8
DOI：10.1038/s41598-020-76333-6
出版社：Springer Nature
摘要：This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO2/Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO2/Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage (I–V) characteristics of Ag/HfO2/Si and Au/HfO2/Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO2/Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO2/Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.
其他摘要：Abstract This work provides useful insights into the development of HfO 2 -based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO 2 /Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO 2 /Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage ( I – V ) characteristics of Ag/HfO 2 /Si and Au/HfO 2 /Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO 2 /Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO 2 /Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.