文章基本信息

标题：Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core–shell wires
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作者：Youngjin Kim ; Minsung Kim ; Ji Hyeon Hwang 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2020
卷号：10
期号：1
页码：1-8
DOI：10.1038/s41598-020-75944-3
出版社：Springer Nature
摘要：A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO2 core–shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO2 skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO2 core–shell wires and poly(vinyl alcohol) (PVA) matrix by a simple spin-coating method. The device exhibited reproducible resistance switching performance with a remarkably narrow distribution of operating parameters (VSET and VRESET were 2.63 ± 0.16 and 0.95 ± 0.11 V, respectively) with a large RON/ROFF ratio of 105 for 200 consecutive switching cycles. Furthermore, the excellent resistance switching behavior in our device was maintained against mechanical stress up to 105 bending test. We believe that the nanocomposite memory device with SWCNT@TiO2 core–shell wires would be a critical asset to realize practical application for a flexible non-volatile memory field.
其他摘要：Abstract A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO 2 core–shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO 2 skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO 2 core–shell wires and poly(vinyl alcohol) (PVA) matrix by a simple spin-coating method. The device exhibited reproducible resistance switching performance with a remarkably narrow distribution of operating parameters (V SET and V RESET were 2.63 ± 0.16 and 0.95 ± 0.11 V, respectively) with a large R ON /R OFF ratio of 10 5 for 200 consecutive switching cycles. Furthermore, the excellent resistance switching behavior in our device was maintained against mechanical stress up to 10 5 bending test. We believe that the nanocomposite memory device with SWCNT@TiO 2 core–shell wires would be a critical asset to realize practical application for a flexible non-volatile memory field.