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  • 标题:High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
  • 本地全文:下载
  • 作者:Sergio Bietti ; Francesco Basso Basset ; Artur Tuktamyshev
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2020
  • 卷号:10
  • 期号:1
  • 页码:1-10
  • DOI:10.1038/s41598-020-62248-9
  • 出版社:Springer Nature
  • 摘要:We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self–assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.
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