文章基本信息

标题：Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
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作者：Akihiro Ohtake ; Takaaki Mano ; Yoshiki Sakuma 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2020
卷号：10
期号：1
页码：1-7
DOI：10.1038/s41598-020-61527-9
出版社：Springer Nature
摘要：Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.
关键词：Structural properties