文章基本信息

标题：Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor
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作者：Sheng Sun ; Shengdong Zhang
期刊名称：E3S Web of Conferences
印刷版ISSN：2267-1242
电子版ISSN：2267-1242
出版年度：2020
卷号：185
页码：1-4
DOI：10.1051/e3sconf/202018504071
出版社：EDP Sciences
摘要：Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.