文章基本信息

标题：Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition
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作者：Yifan Xiao ; Long Min ; Xinke Liu 等
期刊名称：Nanophotonics
印刷版ISSN：2192-8606
电子版ISSN：2192-8614
出版年度：2020
卷号：9
期号：9
页码：3035-3044
DOI：10.1515/nanoph-2019-0562
出版社：Walter de Gruyter GmbH
摘要：The MoS2 photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics. Here, we integrate multilayer MoS2 on monocrystalline SiC substrate though direct chemical vapor deposition. The MoS2 film on SiC substrate shows high quality and thermal stability, in which the full width at half-maximum and first-order temperature coefficient for the E 2 g 1 Raman mode are 4.6 cm −1 and −0.01382 cm −1 /K, respectively. The fabricated photodetector exhibits excellent performance in the UV and visible regions, including an extremely low dark current of ~1 nA at a bias of 20 V and a low noise equivalent of 10 −13 –10 −15 W/Hz 1/2 . The maximum responsivity of the MoS2 /SiC photodetector is 5.7 A/W with the incident light power of 4.35 μW at 365 nm (UV light). Furthermore, the maximum photoconductive gain, noise equivalent power, and normalized detectivity for the fabricated detector under 365 nm illumination are 79.8, 7.08 × 10 −15 W/Hz 1/2 , and 3.07 × 10 10 Jonesat, respectively. We thus demonstrate the possibility for integrating high-performance photodetectors array based on MoS2 /SiC via direct chemical vapor growth.
关键词：MoS2 ; SiC ; chemical vapor deposition ; photodetector