文章基本信息

标题：KAJIAN SIFAT OPTIK FILM TIPIS BST DIDADAH NIOBIUM DAN TANTALUM
本地全文：下载
作者：Farida Huriawati ; Irzaman Irzaman
期刊名称：Jurnal Pendidikan Fisika dan Keilmuan (JPFK)
印刷版ISSN：2442-8868
电子版ISSN：2442-904X
出版年度：2015
卷号：1
期号：1
页码：9-13
DOI：10.25273/jpfk.v1i1.6
出版社：Universitas PGRI Madiun
摘要：In this research thin films of Barium Strontium Titanate (BST) has been synthesis with different compositions Ba 0,5 Sr 0,5 TiO 3 and Ba 0,25 Sr 0,75 TiO 3 which doped by Nb 2 O 5 (Niobium) and Ta 2 O 5 (Tantalum) on Si (100) type-p substrate. Thin films were produced by chemical solution deposition technique (CSD) and spin coating technique with annealing temperature at 850 o C, 900 o C dan 950 o C. Rotation velocity at 3000 rpm and time of rotation is 30 seconds. Characterization of Films is optic Characterization (absorbance ana reflectance). From the Characterizations were obtained BNST thin film with 5% doping and anneling temperature at 850 0 C as photodiode light sensor which applied in electronic circuit.
其他摘要：In this research thin films of Barium Strontium Titanate (BST) has been synthesis with different compositions Ba 0,5 Sr 0,5 TiO 3 and Ba 0,25 Sr 0,75 TiO 3 which doped by Nb 2 O 5 (Niobium) and Ta 2 O 5 (Tantalum) on Si (100) type-p substrate. Thin films were produced by chemical solution deposition technique (CSD) and spin coating technique with annealing temperature at 850 o C, 900 o C dan 950 o C. Rotation velocity at 3000 rpm and time of rotation is 30 seconds. Characterization of Films is optic Characterization (absorbance ana reflectance). From the Characterizations were obtained BNST thin film with 5% doping and anneling temperature at 850 0 C as photodiode light sensor which applied in electronic circuit.
关键词：Thin Film;Ba0;5Sr0;5TiO3;Ba0;25Sr0;75TiO3;doping;Nb2O5 (Niobium);Ta2O5 (Tantalum);Si (100) type-p substrate;Chemichal Solution Deposition (CSD);spin coating;annealing temperature;absobance;reflectance;light intensity.
其他关键词：Thin Film;Ba0;5Sr0;5TiO3;Ba0;25Sr0;75TiO3;doping Nb2O5 (Niobium);Ta2O5 (Tantalum);Si (100) type-p substrate;Chemichal Solution Deposition (CSD);spin coating;annealing temperature;absobance;reflectance;light intensity