文章基本信息

标题：Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2
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作者：Shania Rehman ; Honggyun Kim ; Muhammad Farooq Khan 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2019
卷号：9
期号：1
页码：1-10
DOI：10.1038/s41598-019-55716-4
出版社：Springer Nature
摘要：Correlation between the resistive switching characteristics of Au/Zn-doped CeO 2 /Au devices and ionic mobility of CeO 2 altered by the dopant concentration were explored. It was found that the ionic mobility of CeO 2 has a profound effect on the operating voltages of the devices. The magnitude of operating voltage was observed to decrease when the doping concentration of Zn was increased up to 14%. After further increasing the doping level to 24%, the device hardly exhibits any resistive switching. At a low doping concentration, only isolated V o existed in the CeO 2 lattice. At an intermediate doping concentration, the association between dopant and V o formed (Zn, V o ) × defect clusters. Low number density of these defect clusters initially favored the formation of V o filament and led to a reduction in operating voltage. As the size and number density of (Zn, V o ) × defect clusters increased at a higher doping concentration, the ionic conductivity was limited with the trapping of isolated V o by these defect clusters, which resulted in the diminishing of resistive switching. This research work provides a strategy for tuning the mobility of V o to modulate resistive switching characteristics for non-volatile memory applications.