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  • 标题:Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface
  • 本地全文:下载
  • 作者:Young Mo Kim ; T. Markurt ; Youjung Kim
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2019
  • 卷号:9
  • 期号:1
  • 页码:1-9
  • DOI:10.1038/s41598-019-52772-8
  • 出版社:Springer Nature
  • 摘要:In order to explain the experimental sheet carrier density n 2D at the interface of BaSnO 3 /LaInO 3 , we consider a model that is based on the presence of interface polarization in LaInO 3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO 3 /LaInO 3 heterinterfaces on the thickness of the LaInO 3 layer and the La doping of the BaSnO 3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO 3 over 2-3 pseudocubic unit cells at the coherently strained interface.
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