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  • 标题:Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
  • 本地全文:下载
  • 作者:Duc V. Dinh ; Nan Hu ; Yoshio Honda
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2019
  • 卷号:9
  • 期号:1
  • 页码:1-7
  • DOI:10.1038/s41598-019-52067-y
  • 出版社:Springer Nature
  • 摘要:Growth of Al x Ga 1-x N layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ([Formula: see text]3) and ([Formula: see text]), as well as nonpolar ([Formula: see text]) and ([Formula: see text]) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.
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