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标题：All-2D ReS2 transistors with split gates for logic circuitry
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作者：Junyoung Kwon ; Yongjun Shin ; Hyeokjae Kwon 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2019
卷号：9
期号：1
页码：1-7
DOI：10.1038/s41598-019-46730-7
出版社：Springer Nature
摘要：Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future electronics because of their unique electrical properties. Even though a number of 2D-materials-based logic devices have been demonstrated to date, most of them are a combination of more than two unit devices. If logic devices can be realized in a single channel, it would be advantageous for higher integration and functionality. In this study we report high-performance van der Waals heterostructure (vdW) ReS 2 transistors with graphene electrodes on atomically flat hBN, and demonstrate a NAND gate comprising a single ReS 2 transistor with split gates. Highly sensitive electrostatic doping of ReS 2 enables fabrication of gate-tunable NAND logic gates, which cannot be achieved in bulk semiconductor materials because of the absence of gate tunability. The vdW heterostructure NAND gate comprising a single transistor paves a novel way to realize "all-2D" circuitry for flexible and transparent electronic applications.