文章基本信息

标题：X-band Power Amplifier using pHEMT GaAs Technology with Harmonic Tuning
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作者：Jyoti Malik ; Ketan Gupta ; Renuka Wekhande 等
期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2018
卷号：7
期号：9
页码：10098-10106
DOI：10.15680/IJIRSET.2018.0709040
出版社：S&S Publications
摘要：This paper describes a new method to the design and measured performance of Monolithic Microwave Integrated Circuit (MMIC) power amplifier (PA) for application in communication circuit systems that increase efficiency, output power, gain, small return loss (input & output) and low cost in the circuit. The proposed method is based on a combination of a GaAs power amplifier along with power divider/combiner. The power amplifier (PA) is designed using 0.1µm GaAs power pHEMT technology. The combination and design of the proposed power amplifier ensue gain of over 21dB in the 8 to 12GHz (X-band) frequency bandwidth. With only 3.0 V of drain voltage (VDS) to driver and 4.0V of drain voltage to 2nd stage, the PA exhibits an output power at 1dB gain compression (P1dB) of 23.059dBm, and gain of 22.959 dB, respectively. The maximum current, Imax of this packaged amplifier is 49mA and the power consumption for the device is 650mW. This method have desirable amplitude for the output signal in the fundamental and 2nd harmonics.
关键词：Monolithic microwave integrated circuit (MMIC);X;band; GaAs; pseudomorphic high electron mobility transistors (PHEMTs);power amplifier (PA); power divider;combiner;