文章基本信息

标题：Investigation of the Effect of Varying Silicon Die Size and Thickness on a Small Outline Transistor on the Silicon Die Crack Using Finite Element Method
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作者：Hannah Erika R. Ducusin ; Jennifer .J. Fabular ; Richard Raymond N. Dimagiba 等
期刊名称：Lecture Notes in Engineering and Computer Science
印刷版ISSN：2078-0958
电子版ISSN：2078-0966
出版年度：2018
卷号：2235&2236
页码：716-720
出版社：Newswood and International Association of Engineers
摘要：The current trend for electronic products, especially those in telecommunications, is to be more compact. To match the demand for compact products, a size reduction of electronic product components such as the small outline transistor (SOT) is therefore needed. This work utilized the finite element method with a fracture mechanics approach to analyze the effect of varying geometric parameters on the Jintegral of the existing crack on the silicon die. The J-integral values obtained generally showed a peak value with the midsized silicon die. The J-integral value generally decreased with die thickness but was found to be minimum at around 100 mm die thickness. A further reduction in thickness resulted in an increase in J-integral. Results from the simulations will be helpful in determining the effect of these parameters on the reliability of the package with respect to die crack risk and can be utilized to guide improvements on the existing package design.
关键词：ANSYS; die crack; j-integral; small-outline; transistor