文章基本信息

标题：Perspectives on deterministic control of quantum point defects by scanned probes
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作者：Donghun Lee ; Jay A. Gupta
期刊名称：Nanophotonics
印刷版ISSN：2192-8606
电子版ISSN：2192-8614
出版年度：2019
卷号：8
期号：11
页码：2033-2040
DOI：10.1515/nanoph-2019-0212
出版社：Walter de Gruyter GmbH
摘要：Control over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible. Here we provide a perspective on the principal challenges toward this end, and new opportunities afforded by the integration of scanned probes with optical and magnetic resonance techniques.
关键词：quantum information science ; scanned probe microscopy ; atom manipulation ; nitrogen-vacancy (NV) center ; dopant control