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  • 标题:Rare-metal-free high-performance Ga-Sn-O thin film transistor
  • 本地全文:下载
  • 作者:Tokiyoshi Matsuda ; Kenta Umeda ; Yuta Kato
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2017
  • 卷号:7
  • 期号:1
  • DOI:10.1038/srep44326
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm(2)/Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.
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