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  • 标题:A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures
  • 本地全文:下载
  • 作者:Yuchen Xing ; Lai Wang ; Di Yang
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2017
  • 卷号:7
  • 期号:1
  • DOI:10.1038/srep45082
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:Based on carrier rate equation, a new model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves in the polar InGaN/GaN multi-quantum-well structures. From the study of TRPL curves at different temperatures, it is found that both radiative and non-radiative recombination coefficients vary from low temperature to room temperature. The variation of the coefficients is compatible with the carrier density of states distribution as well as the carrier localization process. These results suggest that there is a novel method to calculate the internal quantum efficiency, which is a complement to the traditional one based on temperature dependent photoluminescence measurement.
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