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标题：High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
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作者：M Waqas Iqbal ; M Zahir Iqbal ; M Farooq Khan 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
期号：1
DOI：10.1038/srep10699
语种：English
出版社：Springer Nature
摘要：An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS₂) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-layer WS₂, is an attractive characteristic for developing optoelectronic devices, as well as field-effect transistors. However, its relatively low mobility and electrical characteristics susceptible to environments remain obstacles for the use of device materials. Here, we demonstrate remarkable improvement in the electrical characteristics of single-layer WS₂ field-effect transistor (SL-WS₂ FET) using chemical vapor deposition (CVD)-grown hexagonal BN (h-BN). SL-WS₂ FET sandwiched between CVD-grown h-BN films shows unprecedented high mobility of 214 cm²/Vs at room temperature. The mobility of a SL-WS₂ FET has been found to be 486 cm²/Vs at 5 K. The ON/OFF ratio of output current is ~10⁷ at room temperature. Apart from an ideal substrate for WS₂ FET, CVD-grown h-BN film also provides a protection layer against unwanted influence by gas environments. The h-BN/SL-WS₂/h-BN sandwich structure offers a way to develop high-quality durable single-layer TMDCs electronic devices.