文章基本信息

标题：Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts
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作者：Hyong Seo Yoon ; Hang-Eun Joe ; Sun Jun Kim 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
期号：1
DOI：10.1038/srep10440
语种：English
出版社：Springer Nature
摘要：Surface potential measurement on atomically thin MoS₂ flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS₂ thin flakes. Schottky diode devices using mono- and multi- layer MoS₂ channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS₂ thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH₃ and NO₂ gases based on the metal work function and the Schottky barrier height change.