文章基本信息

标题：Electric-field-induced Shift in the Threshold Voltage in LaAlO3/SrTiO3 Heterostructures
本地全文：下载
作者：Seong Keun Kim ; Shin-Ik Kim ; Hyungkwang Lim 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
期号：1
DOI：10.1038/srep08023
语种：English
出版社：Springer Nature
摘要：The two-dimensional electron gas (2DEG) at the interface between insulating LaAlO₃ and SrTiO₃ is intriguing both as a fundamental science topic and for possible applications in electronics or sensors. For example, because the electrical conductance of the 2DEG at the LaAlO₃/SrTiO₃ interface can be tuned by applying an electric field, new electronic devices utilizing the 2DEG at the LaAlO₃/SrTiO₃ interface could be possible. For the implementation of field-effect devices utilizing the 2DEG, determining the on/off switching voltage for the devices and ensuring their stability are essential. However, the factors influencing the threshold voltage have not been extensively investigated. Here, we report the voltage-induced shift of the threshold voltage of Pt/LaAlO₃/SrTiO₃ heterostructures. A large negative voltage induces an irreversible positive shift in the threshold voltage. In fact, after the application of such a large negative voltage, the original threshold voltage cannot be recovered even by application of a large positive electric field. This irreversibility is attributed to the generation of deep traps near the LaAlO₃/SrTiO₃ interface under the negative voltage. This finding could contribute to the implementation of nanoelectronic devices using the 2DEG at the LaAlO₃/SrTiO₃ interface.