文章基本信息

标题：High spectral response of self-driven GaN-based detectors by controlling the contact barrier height
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作者：Xiaojuan Sun ; Dabing Li ; Zhiming Li 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
期号：1
DOI：10.1038/srep16819
语种：English
出版社：Springer Nature
摘要：High spectral response of self-driven GaN-based ultraviolet detectors with interdigitated finger geometries were realized using interdigitated Schottky and near-ohmic contacts. Ni/GaN/Cr, Ni/GaN/Ag, and Ni/GaN/Ti/Al detectors were designed with zero bias responsivities proportional to the Schottky barrier difference between the interdigitated contacts of 0.037 A/W, 0.083 A/W, and 0.104 A/W, respectively. Voltage-dependent photocurrent was studied, showing high gain under forward bias. Differences between the electron and hole mobility model and the hole trapping model were considered to be the main photocurrent gain mechanism. These detectors operate in photoconductive mode with large photocurrent gain and depletion mode with high speed, and can extend GaN-based metal-semiconductor-metal detector applications.