文章基本信息

标题：Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
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作者：N. R. Pradhan ; D. Rhodes ; S. Memaran 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
期号：1
DOI：10.1038/srep08979
语种：English
出版社：Springer Nature
摘要：Here, we present a temperature ( T ) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe₂ exfoliated onto SiO₂. Without dielectric engineering and beyond a T -dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm²/Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm²/Vs as T is lowered below ~150 K, indicating that insofar WSe₂-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe₂ and SiO₂. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe₂-based FETs displaying higher room temperature mobilities, i.e. approaching those of p -doped Si, which would make it a suitable candidate for high performance opto-electronics.