文章基本信息

标题：Carbon p Electron Ferromagnetism in Silicon Carbide
本地全文：下载
作者：Yutian Wang ; Yu Liu ; Gang Wang 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：5
期号：1
DOI：10.1038/srep08999
语种：English
出版社：Springer Nature
摘要：Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the V_SiV_C divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.