文章基本信息

标题：Polymer Nanodot-Hybridized Alkyl Silicon Oxide Nanostructures for Organic Memory Transistors with Outstanding High-Temperature Operation Stability
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作者：Chulyeon Lee ; Jooyeok Seo ; Jeongnam Kim 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2016
卷号：6
期号：1
DOI：10.1038/srep33863
语种：English
出版社：Springer Nature
摘要：Organic memory devices (OMDs) are becoming more important as a core component in flexible electronics era because of their huge potentials for ultrathin, lightweight and flexible plastic memory modules. In particular, transistor-type OMDs (TOMDs) have been gradually spotlighted due to their structural advantages possessing both memory and driving functions in single devices. Although a variety of TOMDs have been developed by introducing various materials, less attention has been paid to the stable operation at high temperatures. Here we demonstrate that the polymer nanodot-embedded alkyl silicon oxide (ASiO) hybrid materials, which are prepared by sol-gel and thermal cross-linking reactions between poly(4-vinylphenol) (PVP) and vinyltriethoxysilane, can deliver low-voltage (1~5 V) TOMDs with outstanding operation stability (>4700 cycles) at high temperatures (150 °C). The efficient low-voltage memory function is enabled by the embedded PVP nanodots with particular lattice nanostructures, while the high thermal stability is achieved by the cross-linked ASiO network structures.