文章基本信息

标题：Design and fabrication of high-performance diamond triple-gate field-effect transistors
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作者：Jiangwei Liu ; Hirotaka Ohsato ; Xi Wang 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2016
卷号：6
期号：1
DOI：10.1038/srep34757
语种：English
出版社：Springer Nature
摘要：The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET's output current (174.2 mA mm(-1)) is much higher than that of the planar-type device (45.2 mA mm(-1)), and the on/off ratio and subthreshold swing are more than 10(8) and as low as 110 mV dec(-1), respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.