文章基本信息

标题：Switching Power Universality in Unipolar Resistive Switching Memories
本地全文：下载
作者：Jongmin Kim ; Kyooho Jung ; Yongmin Kim 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2016
卷号：6
期号：1
DOI：10.1038/srep23930
语种：English
出版社：Springer Nature
摘要：We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R(-β), regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.