文章基本信息

标题：Atomic-layer soft plasma etching of MoS2
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作者：Shaoqing Xiao ; Peng Xiao ; Xuecheng Zhang 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2016
卷号：6
期号：1
DOI：10.1038/srep19945
语种：English
出版社：Springer Nature
摘要：Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS₂. This transition requires atomic-layer-precision thinning of bulk MoS₂ without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS₂ in SF₆ + N₂ plasmas with low-energy ( 2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO₂ substrate and the remaining MoS₂ layers. The etching rates can be tuned to achieve complete MoS₂ removal and any desired number of MoS₂ layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS₂ are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.