文章基本信息

标题：Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides
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作者：Youngjun Kim ; Jeong-Gyu Song ; Yong Ju Park 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2016
卷号：6
期号：1
DOI：10.1038/srep18754
语种：English
出版社：Springer Nature
摘要：This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS₂. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS₂. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS₂ with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10⁸. This process is also shown to be applicable to WSe₂, with a PN diode fabricated from a MoS₂/WSe₂ heterostructure exhibiting gate-tunable rectifying characteristics.