文章基本信息

标题：Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors
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作者：Sae-Young Hong ; Hee-Joong Kim ; Dae-Hwan Kim 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2019
卷号：9
期号：1
页码：1-11
DOI：10.1038/s41598-019-43186-7
出版社：Springer Nature
摘要：We investigated the lateral distribution of the equilibrium carrier concentration (n 0 ) along the channel and the effects of channel length (L) on the source-drain series resistance (R ext ) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of n 0 across the channel was extracted using the paired gate-to-source voltage (V GS )-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different Ls. n 0 abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of n 0 was observed in the region near the middle of the channel. The effect of L on the R ext in the TG-SA coplanar a-IGZO TFT was investigated by applying the drain current-conductance method to the TFTs with various Ls. The increase of R ext was clearly observed with an increase in L especially at low V GS s, which was possibly attributed to the enhanced carrier diffusion near the source/drain junctions due to the larger gradient of the carrier concentration in the longer channel devices. Because the lateral carrier diffusion and the relatively high R ext are the critical issues in the TG-SA coplanar structure-based oxide TFTs, the results in this work are expected to be useful in further improving the electrical performance and uniformity of the TG-SA coplanar structure oxide TFTs.