文章基本信息

标题：All Nonmetal Resistive Random Access Memory
本地全文：下载
作者：Te Jui Yen ; Andrei Gismatulin ; Vladimir Volodin 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2019
卷号：9
期号：1
页码：1-5
DOI：10.1038/s41598-019-42706-9
出版社：Springer Nature
摘要：Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.