文章基本信息

标题：Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
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作者：Arash Dehzangi ; Ryan McClintock ; Abbas Haddadi 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2019
卷号：9
期号：1
页码：1-7
DOI：10.1038/s41598-019-41494-6
出版社：Springer Nature
摘要：Visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor based on type-II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room-temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front-side illumination, without any anti-reflection coating where the visible cut-on wavelength of the devices is <0.5 µm. With a dark current density of 5.3 × 10 -4 A/cm 2 under -20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 10 10 cm·Hz 1/2 /W. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10 -10 A/cm 2 and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 10 13 cm·Hz 1/2 /W.