文章基本信息

标题：Quantum Conductance in Silicon Oxide Resistive Memory Devices
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作者：A. Mehonic ; A. Vrajitoarea ; S. Cueff 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2013
卷号：3
期号：1
DOI：10.1038/srep02708
语种：English
出版社：Springer Nature
摘要：Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quantisation of device conductance into multiples of the fundamental unit of conductance, G₀. Such quantum effects appear when the constriction diameter approaches the Fermi wavelength of the electron in the medium – typically several nanometres. Here we find that the conductance of silicon-rich silica (SiO_x) resistive switches is quantised in half-integer multiples of G₀. In contrast to other resistive switching systems this quantisation is intrinsic to SiO_x, and is not due to drift of metallic ions. Half-integer quantisation is explained in terms of the filament structure and formation mechanism, which allows us to distinguish between systems that exhibit integer and half-integer quantisation.