文章基本信息

标题：Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation
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作者：Jiaxin Zheng ; Lu Wang ; Ruge Quhe 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2013
卷号：3
期号：1
DOI：10.1038/srep01314
语种：English
出版社：Springer Nature
摘要：Radio-frequency application of graphene transistors is attracting much recent attention due to the high carrier mobility of graphene. The measured intrinsic cut-off frequency ( f _T) of graphene transistor generally increases with the reduced gate length ( L _gate) till L _gate = 40 nm, and the maximum measured f _T has reached 300 GHz. Using ab initio quantum transport simulation, we reveal for the first time that f _T of a graphene transistor still increases with the reduced L _gate when L _gate scales down to a few nm and reaches astonishing a few tens of THz. We observe a clear drain current saturation when a band gap is opened in graphene, with the maximum intrinsic voltage gain increased by a factor of 20. Our simulation strongly suggests it is possible to design a graphene transistor with an extraordinary high f _T and drain current saturation by continuously shortening L _gate and opening a band gap.