文章基本信息

标题：Charge transport in ion-gated mono-, bi- and trilayer MoS2 field effect transistors
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作者：Leiqiang Chu ; Hennrik Schmidt ; Jiang Pu 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：4
期号：1
DOI：10.1038/srep07293
语种：English
出版社：Springer Nature
摘要：Charge transport in MoS₂ in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS₂ emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS₂ sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO₂ back gate, which allows us to achieve high charge carrier (>10¹³ cm⁻²) densities. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities as low as 1 kΩ for monolayer and 420 Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm² for all devices studied. The temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures.