文章基本信息

标题：Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
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作者：Yue Bai ; Huaqiang Wu ; Riga Wu 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：4
期号：1
DOI：10.1038/srep05780
语种：English
出版社：Springer Nature
摘要：Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlO_δ/Ta₂O_5-x/TaO_y resistive random access memories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance (e.g. >1000X HRS/LRS windows, >10¹⁰ endurance cycles, >10⁴ s retention times at 125°C). Meanwhile, four level MLC is demonstrated with two operation strategies, current controlled scheme (CCS) and voltage controlled scheme (VCS). The switching mechanism of 3D vertical RRAM cells is studied based on temperature-dependent transport characteristics. Furthermore, the applicability of CCS and VCS in 3D vertical RRAM array is compared using resistor network circuit simulation.