文章基本信息

标题：Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes
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作者：P. Y. Zhou ; X. M. Dou ; X. F. Wu 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2015
卷号：4
期号：1
DOI：10.1038/srep03633
语种：English
出版社：Springer Nature
摘要：We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g⁽²⁾(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials.